Parameter modeling for semiconductor arrangements

ABSTRACT

One or more systems and techniques for modeling are provided. An original device model, such as a SPICE model, is used as a basis for fabricating a semiconductor arrangement, such as an integrated circuit arrangement, upon a semiconductor wafer. Fabrication process variations cause measured e-parameters and measured size e-parameters of the semiconductor arrangement to vary from original design parameters of the original device model. Accordingly, a partial set of e-parameters and a partial set of size e-parameters are measured from the semiconductor arrangement, and are expanded into a full set of e-parameters and a full set of size e-parameters using e-parameter derivation and size-centric derivation. The original device model is retargeted using the full set of e-parameters and the full set of size e-parameters to create a new device model that more accurately represents the real-world or fabricated semiconductor arrangement.

BACKGROUND

Semiconductor arrangements, such as integrated circuit arrangements, aremodeled using device models, such as a simulation program withintegrated circuit emphasis (SPICE) model. Such modeling often occursprior to fabrication to determine expected performance of semiconductorarrangements. When the modeling indicates undesired performance, adesign of a semiconductor arrangement is modified prior to fabrication.Tests are performed during fabrication by measuring wafer acceptancetest (WAT) parameters, such as resistance, current, etc. WAT parameterscomprise measurements taken at different probe points during variousstages of fabrication.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1 is an illustration of measuring parameters of a semiconductorarrangement, in accordance with some embodiments.

FIG. 2 is an illustration of a graph indicating a difference betweenoriginal design parameters of an original device model and measurede-parameters of a semiconductor arrangement, in accordance with someembodiments.

FIG. 3 is an illustration of a system configured to model at least oneof e-parameters or size e-parameters, in accordance with someembodiments.

FIG. 4 is an illustration of one or more equations for e-parameterderivation, in accordance with some embodiments.

FIG. 5 is an illustration of one or more equations for size-centricderivation, in accordance with some embodiments.

FIG. 6 is an illustration of a graph indicating a correspondence betweenmeasured e-parameters of a semiconductor arrangement and simulationparameters within a new device model, in accordance with someembodiments.

FIG. 7 is a flow diagram illustrating a method of modeling usinge-parameters, in accordance with some embodiments.

FIG. 8 is a flow diagram illustrating a method of modeling using sizee-parameters, in accordance with some embodiments.

FIG. 9 is an illustration of an example computer-readable medium whereinprocessor-executable instructions configured to embody one or more ofthe provisions set forth herein may be comprised, in accordance withsome embodiments.

FIG. 10 illustrates an example computing environment wherein one or moreof the provisions set forth herein may be implemented, in accordancewith some embodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

One or more systems and techniques for modeling are provided herein. Anoriginal device model, such as a SPICE model, is used as a guide tofabricate a semiconductor arrangement. At times, however, actuale-parameters of the semiconductor arrangement, such as a voltagethreshold parameter, a saturation current parameter, a transconductanceparameter, a transimpedance parameter, a cutoff current parameter, awidth parameter, a length parameter, or a variety of other parameterscorresponding to various sizes of devices, differ from original designparameters within the original device model due to fabrication processvariations or other unpredictable variations that occur duringfabrication of the semiconductor arrangement.

In some embodiments, an e-parameter comprises an electricalcharacteristic of a device, such as a transistor or other semiconductordevice, formed on a semiconductor wafer. In some embodiments, theelectrical characteristic comprises at least one of an AC electricalcharacteristic or a DC electrical characteristic. In some embodiments,the electrical characteristic comprises at least one of a voltagethreshold electrical characteristic, a saturation current electricalcharacteristic, a transconductance electrical characteristic, atransimpedance electrical characteristic, a cutoff current electricalcharacteristic, or other electrical characteristic of a device.Electrical characteristics of a device are indicative of operationalcharacteristics of the device, such as operating voltage and current,device speed, threshold values, operational limitations such as a cutoffcurrent, or a variety of other characteristics of how the deviceperforms.

E-parameters are used to model how devices will operate or ratherdevices are modeled according to e-parameters to determine how thedevice will operate under conditions specified by the e-parameters. Dueto the virtually limitless number of available e-parameters, merely afew e-parameters are measured from a semiconductor wafer, such as duringa wafer acceptance test, to derive a partial set of e-parameterscomprising e-parameters measured from a semiconductor wafer, which arereferred to herein at measured e-parameters. Accordingly, as providedherein, e-parameter derivation is performed to expand the partial set ofe-parameter to a full set of e-parameters comprising the measurede-parameters and one or more derived e-parameters derived by thee-parameter derivation. In this way, devices can be more accurately andfully modeled, such as for identification of operational characteristicsof a device, using the full set of e-parameters instead of merely thepartial set of e-parameters.

In some embodiments, a size e-parameter corresponds to an e-parametercomprising an electrical characteristic associated with a particulardevice size. However, merely a partial set of size e-parameters,corresponding to less than all device sizes of devices formed on thesemiconductor wafer, are measured from the semiconductor wafer.Accordingly, as provided herein, size-centric derivation is performed toexpand a partial set of size e-parameters to a full set of e-parameterscomprising the measured size e-parameters measured from thesemiconductor wafer and one or more derived size e-parameters derived bythe size e-parameter derivation. In this way, devices of various devicesizes are more accurately and fully modeled using the full set of sizee-parameters instead of merely the partial set of size e-parameters.

In some embodiments, modeling is adjusted or retargeted to more closelyapproximate actual or real world parameters of a fabricatedsemiconductor arrangement. In some embodiments, a partial set ofe-parameters and a partial set of size e-parameters are measured fromthe semiconductor arrangement, such as during a wafer acceptance testafter a fabrication stage or from a user stimuli of devicecharacteristics. E-parameter derivation is performed to expand thepartial set of e-parameters to a full set of e-parameters comprising oneor more derived e-parameters, such as an e-parameter derived from acorrelation matrix and one or more measured e-parameters within thepartial set of e-parameters. Size-centric derivation is performed toexpand the partial set of size e-parameters to a full set of sizee-parameters comprising one or more derived size e-parameters, such as asize e-parameter derived from the correlation matrix and one or moremeasured size e-parameters within the partial set of size e-parameters.The original device model is retargeted using at least one of the fullset of e-parameters or the full set of size e-parameters to create a newdevice model that models the semiconductor arrangement more accuratelythan the original device model.

FIG. 1 illustrates a wafer acceptance test component 110 measuringparameters of a semiconductor arrangement 108. A fabrication component106 is configured to fabricate the semiconductor arrangement 108 basedupon original design parameters 104 specified, at least in part, by anoriginal device model 102, such as design layout parameters derived froma SPICE model. In some embodiments, the fabrication component 106 formsdevices, such as transistors and connectivity, of the semiconductorarrangement 108 on a semiconductor wafer based upon the original designparameters 104. The wafer acceptance test component 110 is configured tomeasure parameters at various probe points during various stages offabrication, such as wafer acceptance test parameters obtained after asilicon process or from user stimuli of device characteristics. In someembodiments, the wafer acceptance test component 110 measures a partialset of e-parameters 112, such as a measured voltage thresholde-parameter and a measured saturation current e-parameter, but is unableto measure other desired e-parameters, such as a transconductancee-parameter, a transimpedance e-parameter, a cutoff current e-parameter,etc. In some embodiments, the wafer acceptance test component 110measures a partial set of size e-parameters 114, such as e-parametersmeasured from devices having particular sizes such as a first sizee-parameter of a first device having a first device size, but lacks sizee-parameters of other device sizes such as a second size e-parametercorresponding to a second e-parameter of a second device having a seconddevice size. In this way, the partial set of e-parameters 112 and thepartial set of size e-parameters 114 are obtained.

FIG. 2 illustrates a graph 200 indicating a difference between originaldesign parameters 104 of the original device model 102 and measurede-parameters of the semiconductor arrangement 108 such as actualphysical e-parameters and size e-parameters measured from thesemiconductor arrangement 108. The graph 200 comprises an x-axis 202that corresponds to potential values for an A e-parameter. The graph 200comprises a y-axis 204 that corresponds to potential values for a Be-parameter. The graph 200 comprises a first curve 206 that is afunction of the original device model 102. The graph 200 comprises asecond curve 208 that is a function of measured parameter data obtainedfrom the semiconductor arrangement 108. The second curve 208 isindicative of a measured A e-parameter 212 and a measured B e-parameter214 measured from the semiconductor arrangement 108. The first curve 206is indicative of an original A e-parameter 210 and an original Be-parameter 216 from the original device model 102. Because ofvariations induced during fabrication of the semiconductor arrangement108, the measured A e-parameter 112 does not match the original Ae-parameter 210 and the measured B e-parameter 214 does not match theoriginal B e-parameter 216. As provided herein, the original devicemodel 102 is retargeted using at least one of a full set of e-parametersor a full set of size e-parameters to create a new device model thatmore accurately reflects the measured parameters of the semiconductorarrangement 108, as represented by the second curve 208.

FIG. 3 illustrates a system 300 configured to model at least one ofe-parameters or size e-parameters. The system 300 comprises at least oneof an e-parameter derivation component 302, a size-centric derivationcomponent 304, or a retargeting component 312. The e-parameterderivation component 302 is configured to obtain the partial set ofe-parameters 112 measured from the semiconductor arrangement 108. Insome embodiments, the partial set of e-parameters 112 comprises a subsetof e-parameters used for SPICE modeling, such as the measured voltagethreshold e-parameter and the measured saturation current e-parameter,but lacks other e-parameters. Accordingly, the e-parameter derivationcomponent 302 is configured to perform e-parameter derivation to expandthe partial set of e-parameters 112 to a full set of e-parameters 308.The full set of e-parameters 308 comprises one or more derivede-parameters that are derived from the partial set of e-parameters 112.In some embodiments, the full set of e-parameters 308 comprises the oneor more measured e-parameters within the partial set of e-parameters112. In some embodiments, the full set of e-parameters 308 comprises athreshold number of e-parameters for SPICE modeling of the semiconductorarrangement 108, such as the measured voltage threshold e-parameter, themeasured saturation current e-parameter, a derived saturation currente-parameter, a derived transconductance e-parameter, a derivedtransimpedance e-parameter, a derived cutoff current e-parameter, etc.

In some embodiments of performing e-parameter derivation, the partialset of e-parameters 112 is evaluated to identify a target e-parameter,such as a target transconductance e-parameter, not comprised within thepartial set of e-parameters 112. As illustrated in FIG. 4, a firstequation 400 is used to extract a correlation matrix 401 from theoriginal device model 102 utilizing at least one measured e-parameterwithin the partial set of e-parameters 112, where ep1 corresponds to theat least one measured e-parameter such as the measured voltage thresholdparameter and the measured saturation current e-parameter, ep2corresponds to all e-parameters such as measured e-parameters and targete-parameters that are to be derived, M corresponds to the number ofmeasured e-parameters, N corresponds to the number of all e-parameters,i corresponds to 1−M, j corresponds to 1−N, and a, b, c, and dcorrespond to matrix parameters. A second equation 402 is used to derivean e-parameter using the correlation matrix 401 to create a derivede-parameter for inclusion within the full set of e-parameters 308, whereep1_target corresponds to a target e-parameter and ep1_derivecorresponds to the derived e-parameter. A third equation 404 is used toderive the derived e-parameter based upon all target e-parameters. Afourth equation 406 is used to derive other e-parameters to createderived e-parameters for inclusion within the full set of e-parameters308. A fifth equation 408 is used to derive other e-parameters basedupon all e-parameters. In this way, the full set of e-parameters 308 iscreated.

The size-centric derivation component 304 is configured to obtain thepartial set of size e-parameters 114 measured from the semiconductorarrangement 108. In some embodiments, the partial set of sizee-parameters 114 comprises a subset of size e-parameters used for SPICEmodeling, such as the first size e-parameter corresponding to the firste-parameter of the first device having the first device size.Accordingly, the size-centric derivation component 304 is configured toperform size-centric derivation to expand the partial set of sizee-parameters 114 to a full set of size e-parameters 310. The full set ofsize e-parameters 310 comprises one or more derived size e-parametersthat are derived from the partial set of size e-parameters 114, such asa derived size e-parameter corresponding to the second e-parameter forthe second device size. In some embodiments, the full set of sizee-parameters 310 comprises the one or more measured size e-parameterswithin the partial set of size e-parameters 114. In some embodiments,the full set of size e-parameters 310 comprises a threshold number ofsize e-parameters for SPICE modeling of the semiconductor arrangement108, such as e-parameters for a threshold number of different devicesizes.

In some embodiments of performing size-centric derivation, the partialset of size e-parameters 114 is evaluated to identify a target sizee-parameter, corresponding to a target e-parameter for a target devicesize, not comprised within the partial set of size e-parameters 114. Asillustrated in FIG. 5, a first equation 500 is used to extract acorrelation matrix 501 from the original device model 102 utilizing atleast one measured size e-parameter, where ep1 corresponds to at leastone measured e-parameter, ep3 corresponds to all size e-parameters, Mcorresponds to the number of measured e-parameters, N corresponds to thenumber of all size e-parameters, i corresponds to 1−M, j corresponds to1−N, k corresponds to 1 minus the number of measured size e-parameters,l corresponds to 1 minus the number of size e-parameters, and a, b, c,and d correspond to matrix parameters. A second equation 502 is used toderive a size e-parameter using the correlation matrix 501 to create aderived size e-parameter for inclusion within the full set of sizee-parameters 310, where ep1_derive corresponds to a derived e-parameterand ep3_target corresponds all size e-parameters. A third equation 504is used to derive a size e-parameter based upon all e-parameters of allsize e-parameters. In this way, the full set of size e-parameters 310 iscreated.

The retargeting component 312 is configured to retarget the originaldevice model 102 using at least one of the full set of e-parameters 308or the full set of size e-parameters 310 to create the new device model314. In some embodiments, the new device model 314 more accuratelyrepresents e-parameters, size e-parameters, and other characteristics ofthe semiconductor arrangement 108 than the original device model 102. Insome embodiments, a set of model simulation parameters are selected forinclusion within the new device model 314 based upon the full set ofe-parameters 308 and the full set of size e-parameters 310. In someembodiments, a least square function is applied to the set of modelsimulation parameters to create a new set of model simulation parametersfor inclusion within the new device model 314.

FIG. 6 illustrates a graph 600 indicating a correspondence betweenmeasured e-parameters of the semiconductor arrangement 108 andsimulation parameters within the new device mode 314. The graph 600comprises an x-axis 602 that corresponds to potential values for an Ae-parameter. The graph 600 comprises a y-axis 604 that corresponds topotential values for a C e-parameter. The graph 600 comprises the firstcurve 206 that is a function of the original device model 102. The graph600 comprises a new curve 608 that is a function of the new device model314. The new curve 608 is indicative of a measured A e-parameter 212measured from the semiconductor arrangement 108. The first curve 206 isindicative of an original A e-parameter 210 from the original devicemodel 102. A derived C e-parameter 606 is obtained based upon ane-parameter derivation that utilizes at least one of the measured Ae-parameter 212 or the original A e-parameter 210. In this way, derivede-parameters are obtained for inclusion within the full set ofe-parameters 308.

A method 700 of modeling is illustrated in FIG. 7. At 702, the partialset of e-parameters 112, measured from the semiconductor arrangement108, is obtained. The partial set of e-parameters 112 comprises one ormore measured e-parameters. At 704, e-parameter derivation is performedto expand the partial set of e-parameters 112 to the full set ofe-parameters 308 comprising one or more derived e-parameters. In someembodiments, a determination is made that the partial set ofe-parameters 112 does not comprise a target e-parameter. The correlationmatrix 401 is extracted from the original device model 102 utilizing atleast one measured e-parameter. The target e-parameter is derived usingthe correlation matrix 401 to create a derived e-parameter for inclusionwithin the full set of e-parameters 308. In this way, the full set ofe-parameters 308 is created. At 706, the original device model 102 forthe semiconductor arrangement 108 is retargeted using the full set ofe-parameters 308 to create the new device model 314 that models thesemiconductor arrangement 108.

A method 800 of modeling is illustrated in FIG. 8. At 802, the partialset of size e-parameters 114, measured from the semiconductorarrangement 108, is obtained. The partial set of size e-parameters 114comprises one or more measured size e-parameters. At 804, size-centricderivation is performed to expand the partial set of size e-parameters114 to the full set of size e-parameters 310 comprising one or morederived size e-parameters. In some embodiments, a determination is madethat the partial set of size e-parameters 114 does not comprise a targetsize e-parameter. A correlation matrix 501 is extracted from theoriginal device model 102 utilizing at least one measured sizee-parameter. The target size e-parameter is derived using thecorrelation matrix 501 to create a derived size e-parameter forinclusion within the full set of size e-parameters 310. In this way, thefull set of size e-parameters 310 is created. At 806, the originaldevice model 102 for the semiconductor arrangement 108 is retargetedusing the full set of size e-parameters 310 to create the new devicemodel 314 that models the semiconductor arrangement 108.

Still another embodiment involves a computer-readable medium comprisingprocessor-executable instructions configured to implement one or more ofthe techniques presented herein. An exemplary computer-readable mediumis illustrated in FIG. 9, wherein the implementation 900 comprises acomputer-readable medium 908 (e.g., a CD-R, DVD-R, flash drive, aplatter of a hard disk drive, etc.), on which is encodedcomputer-readable data 906. This computer-readable data 906 in turncomprises a set of computer instructions 904 configured to operateaccording to one or more of the principles set forth herein. In one suchembodiment 900, the processor-executable computer instructions 904 maybe configured to perform a method 902, such as at least some of theexemplary method 700 of FIG. 7 and/or at least some of the exemplarymethod 800 of FIG. 8, for example. In another such embodiment, theprocessor-executable instructions 912 may be configured to implement asystem, such as at least some of the exemplary system 300 of FIG. 3, forexample. Many such computer-readable media may be devised by those ofordinary skill in the art that are configured to operate in accordancewith the techniques presented herein.

As used in this application, the terms “component,” “module,” “system”,“interface”, and the like are generally intended to refer to acomputer-related entity, either hardware, a combination of hardware andsoftware, software, or software in execution. For example, a componentmay be, but is not limited to being, a process running on a processor, aprocessor, an object, an executable, a thread of execution, a program,and/or a computer. By way of illustration, both an application runningon a controller and the controller can be a component. One or morecomponents may reside within a process and/or thread of execution and acomponent may be localized on one computer and/or distributed betweentwo or more computers.

Furthermore, the claimed subject matter may be implemented as a method,apparatus, or article of manufacture using standard programming and/orengineering techniques to produce software, firmware, hardware, or anycombination thereof to control a computer to implement the disclosedsubject matter. The term “article of manufacture” as used herein isintended to encompass a computer program accessible from anycomputer-readable device, carrier, or media. Of course, manymodifications may be made to this configuration without departing fromthe scope or spirit of the claimed subject matter.

FIG. 10 and the following discussion provide a brief, generaldescription of a suitable computing environment to implement embodimentsof one or more of the provisions set forth herein. The operatingenvironment of FIG. 10 is only one example of a suitable operatingenvironment and is not intended to suggest any limitation as to thescope of use or functionality of the operating environment. Examplecomputing devices include, but are not limited to, personal computers,server computers, hand-held or laptop devices, mobile devices (such asmobile phones, Personal Digital Assistants (PDAs), media players, andthe like), multiprocessor systems, consumer electronics, mini computers,mainframe computers, distributed computing environments that include anyof the above systems or devices, and the like.

Although not required, embodiments are described in the general contextof “computer readable instructions” being executed by one or morecomputing devices. Computer readable instructions may be distributed viacomputer readable media (discussed below). Computer readableinstructions may be implemented as program modules, such as functions,objects, Application Programming Interfaces (APIs), data structures, andthe like, that perform particular tasks or implement particular abstractdata types. Typically, the functionality of the computer readableinstructions may be combined or distributed as desired in variousenvironments.

FIG. 10 illustrates an example of a system 1000 comprising a computingdevice 1012 configured to implement one or more embodiments providedherein. In one configuration, computing device 1012 includes at leastone processing unit 1016 and memory 1018. Depending on the exactconfiguration and type of computing device, memory 1018 may be volatile(such as RAM, for example), non-volatile (such as ROM, flash memory,etc., for example) or some combination of the two. This configuration isillustrated in FIG. 10 by dashed line 1014.

In other embodiments, device 1012 may include additional features and/orfunctionality. For example, device 1012 may also include additionalstorage (e.g., removable and/or non-removable) including, but notlimited to, magnetic storage, optical storage, and the like. Suchadditional storage is illustrated in FIG. 10 by storage 1020. In someembodiments, computer readable instructions to implement one or moreembodiments provided herein may be in storage 1020. Storage 1020 mayalso store other computer readable instructions to implement anoperating system, an application program, and the like. Computerreadable instructions may be loaded in memory 1018 for execution byprocessing unit 1016, for example.

The term “computer readable media” as used herein includes computerstorage media. Computer storage media includes volatile and nonvolatile,removable and non-removable media implemented in any method ortechnology for storage of information such as computer readableinstructions or other data. Memory 1018 and storage 1020 are examples ofcomputer storage media. Computer storage media includes, but is notlimited to, RAM, ROM, EEPROM, flash memory or other memory technology,CD-ROM, Digital Versatile Disks (DVDs) or other optical storage,magnetic cassettes, magnetic tape, magnetic disk storage or othermagnetic storage devices, or any other medium which can be used to storethe desired information and which can be accessed by device 1012. Anysuch computer storage media may be part of device 1012.

Device 1012 may also include communication connection(s) 1026 thatallows device 1012 to communicate with other devices. Communicationconnection(s) 1026 may include, but is not limited to, a modem, aNetwork Interface Card (NIC), an integrated network interface, a radiofrequency transmitter/receiver, an infrared port, a USB connection, orother interfaces for connecting computing device 1012 to other computingdevices. Communication connection(s) 1026 may include a wired connectionor a wireless connection. Communication connection(s) 1026 may transmitand/or receive communication media.

The term “computer readable media” may include communication media.Communication media typically embodies computer readable instructions orother data in a “modulated data signal” such as a carrier wave or othertransport mechanism and includes any information delivery media. Theterm “modulated data signal” may include a signal that has one or moreof its characteristics set or changed in such a manner as to encodeinformation in the signal.

Device 1012 may include input device(s) 1024 such as keyboard, mouse,pen, voice input device, touch input device, infrared cameras, videoinput devices, and/or any other input device. Output device(s) 1022 suchas one or more displays, speakers, printers, and/or any other outputdevice may also be included in device 1012. Input device(s) 1024 andoutput device(s) 1022 may be connected to device 1012 via a wiredconnection, wireless connection, or any combination thereof. In someembodiments, an input device or an output device from another computingdevice may be used as input device(s) 1024 or output device(s) 1022 forcomputing device 1012.

Components of computing device 1012 may be connected by variousinterconnects, such as a bus. Such interconnects may include aPeripheral Component Interconnect (PCI), such as PCI Express, aUniversal Serial Bus (USB), firewire (IEEE 1394), an optical busstructure, and the like. In another embodiment, components of computingdevice 1012 may be interconnected by a network. For example, memory 1018may be comprised of multiple physical memory units located in differentphysical locations interconnected by a network.

Those skilled in the art will realize that storage devices utilized tostore computer readable instructions may be distributed across anetwork. For example, a computing device 1030 accessible via a network1028 may store computer readable instructions to implement one or moreembodiments provided herein. Computing device 1012 may access computingdevice 1030 and download a part or all of the computer readableinstructions for execution. Alternatively, computing device 1012 maydownload pieces of the computer readable instructions, as needed, orsome instructions may be executed at computing device 1012 and some atcomputing device 1030.

Various operations of embodiments are provided herein. The order inwhich some or all of the operations are described should not beconstrued as to imply that these operations are necessarily orderdependent. Alternative ordering will be appreciated having the benefitof this description. Further, it will be understood that not alloperations are necessarily present in each embodiment provided herein.Also, it will be understood that not all operations are necessary insome embodiments.

It will be appreciated that layers, features, elements, etc. depictedherein are illustrated with particular dimensions relative to oneanother, such as structural dimensions or orientations, for example, forpurposes of simplicity and ease of understanding and that actualdimensions of the same differ substantially from that illustratedherein, in some embodiments.

Further, unless specified otherwise, “first,” “second,” and/or the likeare not intended to imply a temporal aspect, a spatial aspect, anordering, etc. Rather, such terms are merely used as identifiers, names,etc. for features, elements, items, etc. For example, a first object anda second object generally correspond to object A and object B or twodifferent or two identical objects or the same object.

Moreover, “exemplary” is used herein to mean serving as an example,instance, illustration, etc., and not necessarily as advantageous. Asused herein, “or” is intended to mean an inclusive “or” rather than anexclusive “or”. In addition, “a” and “an” as used in this applicationare generally to be construed to mean “one or more” unless specifiedotherwise or clear from context to be directed to a singular form. Also,at least one of A and B or the like generally means A or B or both A andB. Furthermore, to the extent that “includes”, “having”, “has”, “with”,or variants thereof are used in either the detailed description or theclaims, such terms are intended to be inclusive in a manner similar to“comprising”.

Also, although the disclosure has been shown and described with respectto one or more implementations, equivalent alterations and modificationswill occur to others skilled in the art based upon a reading andunderstanding of this specification and the annexed drawings. Thedisclosure includes all such modifications and alterations and islimited only by the scope of the following claims. In particular regardto the various functions performed by the above described components(e.g., elements, resources, etc.), the terms used to describe suchcomponents are intended to correspond, unless otherwise indicated, toany component which performs the specified function of the describedcomponent (e.g., that is functionally equivalent), even though notstructurally equivalent to the disclosed structure. In addition, while aparticular feature of the disclosure may have been disclosed withrespect to only one of several implementations, such feature may becombined with one or more other features of the other implementations asmay be desired and advantageous for any given or particular application.

According to an aspect of the instant disclosure, a method for modelingis provided. The method comprises obtaining a partial set ofe-parameters measured from a semiconductor arrangement. The partial setof e-parameters comprises one or more measured e-parameters. E-parameterderivation is performed to expand the partial set of e-parameters to afull set of e-parameters comprising one or more derived e-parameters. Anoriginal device model for the semiconductor arrangement is retargetedusing the full set of e-parameters to create a new device model thatmodels the semiconductor arrangement.

According to an aspect of the instant disclosure, a system for modelingis provided. The system comprises an e-parameter derivation component, asize-centric derivation component, and a retargeting component. Thee-parameter derivation component is configured to obtain a partial setof e-parameters measured from a semiconductor arrangement. The partialset of e-parameters comprises one or more measured e-parameters. Thee-parameter derivation component is configured to perform e-parameterderivation to expand the partial set of e-parameters to a full set ofe-parameters comprising one or more derived e-parameters. Thesize-centric derivation component is configured to obtain a partial setof size e-parameters measured from the semiconductor arrangement. Thepartial set of size e-parameters comprises one or more measured sizee-parameters. A measured size e-parameter corresponds to a firste-parameter of a first device within the semiconductor arrangement, thefirst device having a first device size. The size-centric derivationcomponent is configured to perform size-centric derivation to expand thepartial set of size e-parameters to a full set of size e-parameterscomprising one or more derived size e-parameters. A derived sizee-parameter corresponds to second e-parameter for a second device sizedifferent than the first device size The retargeting component isconfigured to retarget an original device model for the semiconductorarrangement using at least one of the full set of e-parameters or thefull set of size e-parameters to create a new device model that modelsthe semiconductor arrangement.

According to an aspect of the instant disclosure, a method for modelingis provided. The method comprises obtaining a partial set of sizee-parameters measured from a semiconductor arrangement. The partial setof size e-parameters comprises one or more measured size e-parameters. Ameasured size e-parameter corresponds to a first e-parameter of a firstdevice within the semiconductor arrangement. The first device has afirst device size. Size-centric derivation is performed to expand thepartial set of size e-parameters to a full set of size e-parameterscomprising one or more derived size e-parameters. A derived sizee-parameter corresponds to a second e-parameter for a second device sizedifferent than the first device size. An original device model for thesemiconductor arrangement is retargeted using the full set of sizee-parameters to create a new device model that models the semiconductorarrangement.

The foregoing outlines features of several embodiments so that those ofordinary skill in the art may better understand various aspects of thepresent disclosure. Those of ordinary skill in the art should appreciatethat they may readily use the present disclosure as a basis fordesigning or modifying other processes and structures for carrying outthe same purposes and/or achieving the same advantages of variousembodiments introduced herein. Those of ordinary skill in the art shouldalso realize that such equivalent constructions do not depart from thespirit and scope of the present disclosure, and that they may makevarious changes, substitutions, and alterations herein without departingfrom the spirit and scope of the present disclosure.

What is claimed:
 1. A method for modeling, comprising: obtaining apartial set of e-parameters measured from a semiconductor arrangementcreated using an original device model for the semiconductorarrangement, the partial set of e-parameters comprising one or moremeasured e-parameters; performing e-parameter derivation to expand thepartial set of e-parameters to a full set of e-parameters, wherein: theperforming e-parameter derivation comprises: determining that thepartial set of e-parameters does not comprise a target e-parameter;extracting a correlation matrix from the original device model utilizingat least one measured e-parameter; and deriving the target e-parameterusing the correlation matrix to create a derived e-parameter forinclusion within the full set of e-parameters, and the full set ofe-parameters comprises the derived e-parameter; and retargeting theoriginal device model using the full set of e-parameters to create a newdevice model, different than the original device model, that models thesemiconductor arrangement.
 2. The method of claim 1, comprising:obtaining a partial set of size e-parameters measured from thesemiconductor arrangement, the partial set of size e-parameterscomprising one or more measured size e-parameters, a measured sizee-parameter corresponding to a first e-parameter of a first devicewithin the semiconductor arrangement, the first device having a firstdevice size; performing size-centric derivation to expand the partialset of size e-parameters to a full set of size e-parameters, the fullset of size e-parameters comprising one or more derived sizee-parameters, a derived size e-parameter corresponding to seconde-parameter for a second device size different than the first devicesize; and retargeting the original device model for the semiconductorarrangement using the full set of size e-parameters to create the newdevice model.
 3. The method of claim 1, comprising: deriving one or moreadditional derived e-parameters, for inclusion within the full set ofe-parameters, utilizing the correlation matrix.
 4. The method of claim1, the full set of e-parameters comprising the one or more measurede-parameters.
 5. The method of claim 1, the full set of e-parameterscomprising a threshold number of e-parameters used for SPICE modeling.6. The method of claim 2, the performing size-centric derivationcomprising: determining that the partial set of size e-parameters doesnot comprise a target size e-parameter corresponding to a targete-parameter for a target device size; extracting a correlation matrixfrom the original device model utilizing at least one measured sizee-parameter; and deriving the target size e-parameter using thecorrelation matrix to create a derived size e-parameter, for the targetdevice size, for inclusion within the full set of size e-parameters. 7.The method of claim 6, the extracting a correlation matrix comprising:utilizing at least one measured size e-parameter for extracting thecorrelation matrix.
 8. The method of claim 6, comprising: deriving oneor more additional derived size e-parameters, for inclusion within thefull set of size e-parameters, utilizing the correlation matrix.
 9. Themethod of claim 1, the obtaining comprising: obtaining the partial setof e-parameters from wafer acceptance test (WAT) data.
 10. The method ofclaim 1, the obtaining comprising: obtaining the partial set ofe-parameters from a user stimuli of device characteristics.
 11. Themethod of claim 1, the full set of e-parameters comprising at least oneof a voltage threshold derived parameter, a saturation current derivedparameter, a transconductance derived parameter, a transimpedancederived parameter, or a cutoff current derived parameter.
 12. The methodof claim 1, the retargeting the original device model comprising:selecting a set of model simulation parameters, for inclusion within thenew device model, based upon the full set of e-parameters.
 13. Themethod of claim 1, the retargeting the original device model comprising:selecting a set of model simulation parameters based upon the full setof e-parameters; and applying a least square function to the set ofmodel simulation parameters to create a new set of model simulationparameters for inclusion within the new device model.
 14. A systemconfigured to model at least one of e-parameters or size e-parameterscomprising: an e-parameter derivation component configured to: obtain apartial set of e-parameters measured from a semiconductor arrangement,the partial set of e-parameters comprising one or more measurede-parameters; and perform e-parameter derivation to expand the partialset of e-parameters to a full set of e-parameters, wherein: performinge-parameter derivation comprises: determining that the partial set ofe-parameters does not comprise a target e-parameter; extracting acorrelation matrix from an original device model for the semiconductorarrangement utilizing at least one measured e-parameter; and derivingthe target e-parameter using the correlation matrix to create a derivede-parameter for inclusion within the full set of e-parameters, and thefull set of e-parameters comprises derived e-parameter; a size-centricderivation component configured to: obtain a partial set of sizee-parameters measured from the semiconductor arrangement, the partialset of size e-parameters comprising one or more measured sizee-parameters, a measured size e-parameter corresponding to a firste-parameter of a first device within the semiconductor arrangement, thefirst device having a first device size; and perform size-centricderivation to expand the partial set of size e-parameters to a full setof size e-parameters, wherein: performing the size-centric derivationcomprises: determining that the partial set of size e-parameters doesnot comprise a target size e-parameter corresponding to a targete-parameter for a target device size; extracting a correlation matrixfrom the original device model utilizing at least one measured sizee-parameter; and deriving the target size e-parameter using thecorrelation matrix to create a derived size e-parameter, for the targetdevice size, for inclusion within the full set of size e-parameters, thefull set of size e-parameters comprises the derived size e-parameter,and the derived size e-parameter corresponds to a second e-parameter fora second device size different than the first device size; and aretargeting component configured to: retarget the original device modelusing at least one of the full set of e-parameters or the full set ofsize e-parameters to create a new device model that models thesemiconductor arrangement.
 15. The system of claim 14, the retargetingcomponent configured to: select a set of model simulation parametersbased upon the full set of e-parameters; and apply a least squarefunction to the set of model simulation parameters to create a new setof model simulation parameters for inclusion within the new devicemodel.
 16. A method for modeling, comprising: obtaining a partial set ofsize e-parameters measured from a semiconductor arrangement createdusing an original device model for the semiconductor arrangement, thepartial set of size e-parameters comprising one or more measured sizee-parameters, a measured size e-parameter corresponding to a firste-parameter of a first device within the semiconductor arrangement, thefirst device having a first device size; performing size-centricderivation to expand the partial set of size e-parameters to a full setof size e-parameters, wherein: performing the size-centric derivationcomprises: determining that the partial set of size e-parameters doesnot comprise a target size e-parameter corresponding to a targete-parameter for a target device size; extracting a correlation matrixfrom the original device model utilizing at least one measured sizee-parameter; and deriving the target size e-parameter using thecorrelation matrix to create a derived size e-parameter, for the targetdevice size, for inclusion within the full set of size e-parameters, thefull set of size e-parameters comprises the derived size e-parameter,and the derived size e-parameter corresponds to a second e-parameter fora second device size different than the first device size; andretargeting the original device model using the full set of sizee-parameters to create a new device model, different than the originaldevice model, that models the semiconductor arrangement.
 17. The methodof claim 16, comprising: obtaining a partial set of e-parametersmeasured from the semiconductor arrangement, the partial set ofe-parameters comprising one or more measured e-parameters; performinge-parameter derivation to expand the partial set of e-parameters to afull set of e-parameters, the full set of e-parameters comprising one ormore derived e-parameters; and retargeting the original device model forthe semiconductor arrangement using the full set of e-parameters tocreate the new device model.
 18. The method of claim 17, the performinge-parameter derivation comprising: determining that the partial set ofe-parameters does not comprise a target e-parameter; extracting acorrelation matrix from the original device model utilizing at least onemeasured e-parameter; and deriving the target e-parameter using thecorrelation matrix to create a derived e-parameter for inclusion withinthe full set of e-parameters.
 19. The method of claim 16, the obtainingcomprising: obtaining the partial set of e-parameters from waferacceptance test (WAT) data.
 20. The method of claim 16, the obtainingcomprising: obtaining the partial set of e-parameters from a userstimuli of device characteristics.